Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices

C. Y. Hsueh, T. L. Huang, K. P. Peng, M. H. Kuo, Horng-Chih Lin, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength-tunable photodetectors, and MOSFETs.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages107-108
Number of pages2
ISBN (Electronic)9784863486478
DOIs
StatePublished - 29 Dec 2017
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 4 Jun 20175 Jun 2017

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Conference

Conference22nd Silicon Nanoelectronics Workshop, SNW 2017
CountryJapan
CityKyoto
Period4/06/175/06/17

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    Hsueh, C. Y., Huang, T. L., Peng, K. P., Kuo, M. H., Lin, H-C., & Li, P-W. (2017). Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (pp. 107-108). [8242320] (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242320