CoTiO3 high-κ dielectrics on HSG for DRAM applications

Tien-Sheng Chao*, Wei Ming Ku, Hong Chin Lin, Dolf Landheer, Yu Yang Wang, Yukihiro Mori

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

In this paper, a new high-κ dielectric CoTiO3 has been investigated for the first time on hemispherical grained (HSG) poly-Si dynamic random access memories capacitors. Three types of HSG were prepared. We found that capacitors with maximum grain size and the highest density exhibit twice the capacitance of the others. The dielectric constant for CoTiO3 was estimated to be larger than 50. Leakage current measurements performed at temperatures as high as 100 °C show that this dielectric is stable. The polarity dependence is found to be due to the different barrier heights with the nitride barrier. A leakage mechanism is proposed for this polarity dependence.

Original languageEnglish
Pages (from-to)2200-2204
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume51
Issue number12
DOIs
StatePublished - 1 Dec 2004

Keywords

  • Dynamic random access memories (DRAM)
  • High-κ
  • Nitride

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    Chao, T-S., Ku, W. M., Lin, H. C., Landheer, D., Wang, Y. Y., & Mori, Y. (2004). CoTiO3 high-κ dielectrics on HSG for DRAM applications. IEEE Transactions on Electron Devices, 51(12), 2200-2204. https://doi.org/10.1109/TED.2004.839880