CO2 laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO2

Chun Jung Lin*, Yu Lun Chueh, Li Jen Chou, Hao-Chung Kuo, Gong Ru Lin

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Localized synthesis of 3-8 nm Si nanocrystals (nc-Si) in PECVD-grown Si-rich SiO2 (SRSO) film is demonstrated using CO2 laser annealing at an intensity below the ablation-threshold (6.0 kW/cm2). At an optimized surface temperature of 1285°C, the precipitated nc-Si in CO2-laser-annealed SRSO film results in near-infrared photoluminescence (PL) at 806 nm, whereas the ablation damage induced at higher laser intensities as well as temperatures results in blue PL at 410 nm related to structural defects. The refractive index of the laser-annealed SRSO at 633 nm increases from 1.57 to 2.31 as the laser intensity increases from 1.5 to 6.0 kW/cm2. Transmission electron microscopy analysis reveals that the average size and volume density of Si nanocrystals embedded in the SRSO film are about 6 nm and 4.5×1016 cm-3, respectively. The CO2 laser annealing with controlled intensity and spot size can potentially accomplish in-situ, localized annealing of the SRSO film without causing irreversible damage to nearby electronics.

Original languageEnglish
Article numberA19.2
Pages (from-to)325-330
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume862
DOIs
StatePublished - 1 Dec 2005
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: 28 Mar 20051 Apr 2005

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