Correlation of carrier-concentration and superconducting transition in Dy1-xPrxBa2Cu3O7

Z. J. Huang*, J. G. Lin, Juhn-Jong Lin, C. Y. Huang, X. L. Cheng, J. C. Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The Thermoelectric power (S) and superconducting transition temperature (Tc) have been systematically measured for a series of (Dy1-xPrx)Ba2Cu3O 7-δ with x from 0 to 0.7. Our results show that S increases progressively with increasing x while Tc decreases. By using the empirical relation between S and the carrier concentration (n), n has been extracted. The result shows a clear linear reduction of n with increasing x for x > 0.15. Our Tc-n relation shows a remarkable agreement with the universal parabolic Tc-n relation, demonstrating that the Tc-suppression with Pr-doping comes dominantly from the hole depletion effect.

Original languageEnglish
Pages (from-to)505-508
Number of pages4
JournalChinese Journal of Physics
Volume34
Issue number2S
StatePublished - 1 Apr 1996

Keywords

  • Transport properties
  • Effects of crystal defects, doping and substitution
  • Y-based compound

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