Correlation Between Substrate and Gate Currents in MOSFET's

Simon Tam, Ping Keung Ko, Ping Keung Ko, Chen-Ming Hu, Richard S. Muller

Research output: Contribution to journalArticle

43 Scopus citations

Abstract

A correlation between substrate and gate currents in MOSFET’s is described and analyzed. Both of these currents are the result of hot-electron mechanisms. Theory for these mechanisms has been applied to derive an expression for gate current in terms of substrate current and parameters that can be calculated from processing data and bias conditions. The theory is successfully applied to a series of n-channel MOSFET’s with a range of geometries and bias values.

Original languageEnglish
Pages (from-to)1740-1744
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume29
Issue number11
DOIs
StatePublished - 1 Jan 1982

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