Correlation between stress relaxation and electromigration in Cu/low k lines

Dongwen Gan*, Scan Yoon, Paul S. Ho, Leu-Jih Perng, Jose Maiz, Tracey Scherban

*Corresponding author for this work

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

The effect of interfacial layer on mass transport in Cu damascene line structures was investigated by measuring stress relaxation using bending beam and x-ray diffraction methods. Interfacial layers investigated included SiC, SiNx and a novel etch stop (ES) layer in Cu line structures with a CDO (carbon doped oxide) low k interlevel dielectric (ILD). The observed stress relaxation rates were compared with no passivation in order to examine the bonding effect on interfacial mass transport. A significant effect due to different interfacial layers was observed which can be attributed to the interfacial chemistry and correlated to electromigration lifetime and interfacial adhesion. A kinetic model is being developed to deduce interfacial diffusivity from stress relaxation rate by considering the contribution to mass transport via various diffusion paths including the Cu/passivation interface.

Original languageEnglish
Pages (from-to)313-318
Number of pages6
JournalAdvanced Metallization Conference (AMC)
StatePublished - 1 Dec 2003
EventAdvanced Metallization Conference 2003, AMC 2003 - Montreal, Que., Canada
Duration: 21 Oct 200323 Oct 2003

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