@inproceedings{f614aed3d8234fd5b20921224fa768da,
title = "Correlation between SET-state current level and read-disturb failure time in a resistive switching memory",
abstract = "The relationship between SET-state current level and read-disturb failure time in a tungsten oxide RRAM is characterized and modeled. Our result shows that read voltage-induced reduction of oxygen vacancy density in tungsten oxide follows a power law dependence on cumulative read-disturb time. The power factor is independent of SET-state current level. Read-disturb failure time is considerably improved by several orders of magnitude as SET-state current level increases a few times. An analytical model to correlate SET-state current level and read-disturb failure time is proposed. Since SET-state current level is related to a cross-section of a conductive filament in an oxide, our model is developed based on a relationship between oxide area and critical oxide trap (oxygen vacancy) density from an oxide breakdown model. The validity of the proposed model is supported by experiment results.",
keywords = "RRAM, SET-state current level, model, read-disturb failure",
author = "Su, {P. C.} and Jiang, {C. M.} and Wang, {C. W.} and Ta-Hui Wang",
year = "2018",
month = may,
day = "25",
doi = "10.1109/IRPS.2018.8353674",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "PMY.11--PMY.15",
booktitle = "2018 IEEE International Reliability Physics Symposium, IRPS 2018",
note = "null ; Conference date: 11-03-2018 Through 15-03-2018",
}