Correlation between SET-state current level and read-disturb failure time in a resistive switching memory

P. C. Su, C. M. Jiang, C. W. Wang, Ta-Hui Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The relationship between SET-state current level and read-disturb failure time in a tungsten oxide RRAM is characterized and modeled. Our result shows that read voltage-induced reduction of oxygen vacancy density in tungsten oxide follows a power law dependence on cumulative read-disturb time. The power factor is independent of SET-state current level. Read-disturb failure time is considerably improved by several orders of magnitude as SET-state current level increases a few times. An analytical model to correlate SET-state current level and read-disturb failure time is proposed. Since SET-state current level is related to a cross-section of a conductive filament in an oxide, our model is developed based on a relationship between oxide area and critical oxide trap (oxygen vacancy) density from an oxide breakdown model. The validity of the proposed model is supported by experiment results.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesPMY.11-PMY.15
ISBN (Electronic)9781538654798
DOIs
StatePublished - 25 May 2018
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 11 Mar 201815 Mar 2018

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Conference

Conference2018 IEEE International Reliability Physics Symposium, IRPS 2018
CountryUnited States
CityBurlingame
Period11/03/1815/03/18

Keywords

  • RRAM
  • SET-state current level
  • model
  • read-disturb failure

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    Su, P. C., Jiang, C. M., Wang, C. W., & Wang, T-H. (2018). Correlation between SET-state current level and read-disturb failure time in a resistive switching memory. In 2018 IEEE International Reliability Physics Symposium, IRPS 2018 (pp. PMY.11-PMY.15). (IEEE International Reliability Physics Symposium Proceedings; Vol. 2018-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2018.8353674