Correlation between quantized electronic states and oscillatory thickness relaxations of 2D Pb islands on Si(111)-(7 × 7) surfaces

W. B. Su*, S. H. Chang, Wen-Bin Jian, C. S. Chang, L. J. Chen, T. T. Tsong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

219 Scopus citations

Abstract

The physical properties of 2D Pb islands grown on Si(111) surfaces at low temperature were studied. The quantized electronic states resulted from the finite thickness normal to the surface set off surface charge variation and structural relaxation of the island, and their correlation is clearly demonstrated with definitive assignment of the quantum numbers.

Original languageEnglish
Pages (from-to)5116-5119
Number of pages4
JournalPhysical Review Letters
Volume86
Issue number22
DOIs
StatePublished - 28 May 2001

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