Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

Yen Ku Lin; Shuichi Noda; Hsiao Chieh Lo; Shih Chien Liu; Chia Hsun Wu; Yuen Yee Wong; Quang Ho Luc; Po Chun Chang; Heng-Tung Hsu; Seiji Samukawa; Edward Yi Chang

doi:10.1109/LED.2016.2634606

Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

Yen Ku Lin, Shuichi Noda, Hsiao Chieh Lo, Shih Chien Liu, Chia Hsun Wu, Yuen Yee Wong, Quang Ho Luc, Po Chun Chang, Heng-Tung Hsu, Seiji Samukawa, Edward Yi Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

Original language	English
Article number	7802679
Number of pages	1
Journal	IEEE Electron Device Letters
Volume	38
Issue number	1
DOIs	https://doi.org/10.1109/LED.2016.2634606
State	Published - 1 Jan 2017

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10.1109/LED.2016.2634606

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Cite this

Lin, Yen Ku ; Noda, Shuichi ; Lo, Hsiao Chieh ; Liu, Shih Chien ; Wu, Chia Hsun ; Wong, Yuen Yee ; Luc, Quang Ho ; Chang, Po Chun ; Hsu, Heng-Tung ; Samukawa, Seiji ; Chang, Edward Yi. / Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications. In: IEEE Electron Device Letters. 2017 ; Vol. 38, No. 1.

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title = "Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications",

author = "Lin, {Yen Ku} and Shuichi Noda and Lo, {Hsiao Chieh} and Liu, {Shih Chien} and Wu, {Chia Hsun} and Wong, {Yuen Yee} and Luc, {Quang Ho} and Chang, {Po Chun} and Heng-Tung Hsu and Seiji Samukawa and Chang, {Edward Yi}",

year = "2017",

month = jan,

day = "1",

doi = "10.1109/LED.2016.2634606",

language = "English",

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Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications. / Lin, Yen Ku; Noda, Shuichi; Lo, Hsiao Chieh; Liu, Shih Chien; Wu, Chia Hsun; Wong, Yuen Yee; Luc, Quang Ho; Chang, Po Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi.

In: IEEE Electron Device Letters, Vol. 38, No. 1, 7802679, 01.01.2017.

Research output: Contribution to journal › Letter › peer-review

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T1 - Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

AU - Lin, Yen Ku

AU - Noda, Shuichi

AU - Lo, Hsiao Chieh

AU - Liu, Shih Chien

AU - Wu, Chia Hsun

AU - Wong, Yuen Yee

AU - Luc, Quang Ho

AU - Chang, Po Chun

AU - Hsu, Heng-Tung

AU - Samukawa, Seiji

AU - Chang, Edward Yi

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DO - 10.1109/LED.2016.2634606

M3 - Letter

AN - SCOPUS:85012942176

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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