Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

Yen Ku Lin, Shuichi Noda, Hsiao Chieh Lo, Shih Chien Liu, Chia Hsun Wu, Yuen Yee Wong, Quang Ho Luc, Po Chun Chang, Heng-Tung Hsu, Seiji Samukawa, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

Original languageEnglish
Article number7802679
Number of pages1
JournalIEEE Electron Device Letters
Volume38
Issue number1
DOIs
StatePublished - 1 Jan 2017

Cite this