Core model for independent multigate MOSFETs

Juan Pablo Duarte, Sourabh Khandelwal, Huan Lin Chang, Yen Kai Lin, Pragya Kushwaha, Yogesh Singh Chauhan, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter presents the core model for the industry standard compact model BSIM-IMG, a fully featured turn-key compact model for independent multigate MOSFETs. The two independent (front and back gates) controls of the channel charge in these devices enable novel applications wherein the back gate can be in depletion or inversion, and BSIM-IMG accurately models these scenarios. Modeling of the channel charge in this device requires a consistent solution of coupled Poisson’s equations at the front and the back gate. This chapter presents an analytical solution for the Poisson’s equation which is numerically robust and passes important quality tests for an industry grade compact model. To represent real device effects, several extra models are later incorporated, such as drain-induced barrier lowering, velocity saturation, short-channel effects, self-heating effect, mobility-field dependence, and substrate-depletion effect.

Original languageEnglish
Title of host publicationIndustry Standard FDSOI Compact Model BSIM-IMG for IC Design
PublisherElsevier
Pages15-34
Number of pages20
ISBN (Electronic)9780081024010
ISBN (Print)9780081024027
DOIs
StatePublished - 1 Jan 2019

Keywords

  • Back gate
  • BSIM-IMG
  • Front gate
  • MOSFETs
  • Multigate
  • Poisson

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    Duarte, J. P., Khandelwal, S., Chang, H. L., Lin, Y. K., Kushwaha, P., Chauhan, Y. S., & Hu, C. (2019). Core model for independent multigate MOSFETs. In Industry Standard FDSOI Compact Model BSIM-IMG for IC Design (pp. 15-34). Elsevier. https://doi.org/10.1016/B978-0-08-102401-0.00002-9