Copper voids improvement for the copper dual damascene interconnection process

T. C. Wang, Y. L. Wang*, Tsung-Eong Hsien, S. C. Chang, Y. L. Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

The mechanism of copper (Cu) voids formation from electro-chemical plating (ECP) followed by Cu chemical mechanical polishing (CMP) are studied in Cu dual-damascene interconnection. The formation of Cu voids at metal lines is the main problem that causes not only the failure of via-induced metal-island corrosion but also yield loss. The galvanic theory and Cu lifting mechanism are proposed to explain the dependence of Cu-void performance on the Cu grain size and the benzotriazole (BTA, C6H5N3) flow rates. In the integration process of Cu interconnects, it is found that the smaller Cu grain size in ECP conditions and less BTA flow rate in CMP processes cannot only reduce the number of Cu voids but also improve the wafer yield.

Original languageEnglish
Pages (from-to)566-571
Number of pages6
JournalJournal of Physics and Chemistry of Solids
Volume69
Issue number2-3
DOIs
StatePublished - 1 Feb 2008

Keywords

  • A. Semiconductors
  • A. Thin films
  • D. Defects
  • D. Electrical properties

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