As integrated circuit manufacture moving to copper interconnection for the most advanced products, protection of copper (Cu) surfaces becomes a major challenge for the back-end-of-line manufacturing process. The damages on Cu, such as Cu corrosion and oxidation, are often observed on wafers when exposing bare Cu surface in the presence of moisture and/or acidic gases. Furthermore, the Cu oxide results in poor adhesion both at Cu/barrier layer and Cu/stop layer interfaces. In this work, a novel Cu dual damascene structure which completely encloses the Cu surface with a tantalum nitride layer is presented. This capping layer avoids the Cu corrosion and oxidation due to its ability to keep moisture and acid off and away from the Cu surface.
|Number of pages||7|
|Journal||Thin Solid Films|
|State||Published - 30 Jan 2004|
|Event||Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States|
Duration: 28 Apr 2002 → 2 May 2002
- TaN capping process