Copper surface protection with a completely enclosed copper structure for a damascene process

T. C. Wang, Tsung-Eong Hsien, Y. L. Wang*, Y. L. Wu, K. Y. Lo, C. W. Liu, K. W. Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

As integrated circuit manufacture moving to copper interconnection for the most advanced products, protection of copper (Cu) surfaces becomes a major challenge for the back-end-of-line manufacturing process. The damages on Cu, such as Cu corrosion and oxidation, are often observed on wafers when exposing bare Cu surface in the presence of moisture and/or acidic gases. Furthermore, the Cu oxide results in poor adhesion both at Cu/barrier layer and Cu/stop layer interfaces. In this work, a novel Cu dual damascene structure which completely encloses the Cu surface with a tantalum nitride layer is presented. This capping layer avoids the Cu corrosion and oxidation due to its ability to keep moisture and acid off and away from the Cu surface.

Original languageEnglish
Pages (from-to)542-548
Number of pages7
JournalThin Solid Films
Volume447-448
DOIs
StatePublished - 30 Jan 2004
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 28 Apr 20022 May 2002

Keywords

  • Corrosion
  • Cu
  • TaN capping process

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