Copper direct bonding with short time and excellent electrical property by <111>-oriented nano-twinned copper

Kai Cheng Shie, Jing Ye Juang, Chih Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In order to be compatible with semiconductor manufacturing, nanotwinned Cu microbumps were fabricated on 8' wafers. The pair of top and bottom dies were jointed through thermal compression bonding. After 1 min bonding time, the resistance could obtaine from all test structures, which indicates all the microbumps were bonded in the short time successfully.

Original languageEnglish
Title of host publication2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
PublisherIEEE
Pages50-50
Number of pages1
ISBN (Electronic)9784904743072
DOIs
StatePublished - May 2019
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 21 May 201925 May 2019

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period21/05/1925/05/19

Fingerprint Dive into the research topics of 'Copper direct bonding with short time and excellent electrical property by <111>-oriented nano-twinned copper'. Together they form a unique fingerprint.

  • Cite this

    Shie, K. C., Juang, J. Y., & Chen, C. (2019). Copper direct bonding with short time and excellent electrical property by <111>-oriented nano-twinned copper. In 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) (pp. 50-50). [8735201] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). IEEE. https://doi.org/10.23919/LTB-3D.2019.8735201