Conventional n-channel MOSFET devices using single layer HfO2 and ZrO2 as high-k gate dielectrics with polysilicon gate electrode

Yudong Kim, Gabriel Gebara, Michael Freiler, Joel Barnett, Deborah Riley, Jerry Chen, Kenneth Torres, Jae Eun Lim, Brendan Foran, Fred Shaapur, Avinash Agarwal, Patrick Lysaght, George A. Brown, Chadwin Young, Swarnal Borthakur, Hong Jyh Li, Billy Nguyen, Peter Zeitzoff, Gennadi Bersuker, David DerroRenate Bergmann, Robert W. Murto, Tuo-Hung Hou, Howard R. Huff, Eric Shero*, Christophe Pomarede, Michael Givens, Mike Mazanec, Chris Werkhoven

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

87 Scopus citations

Abstract

Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor characteristics with a S/D RTA temperature of 1000°C, demonstrating feasibility of integrating high-k gate-dielectrics into conventional CMOS process technology. Effects of S/D RTA temperatures on the HfO2/Poly-Si transistor characteristics were discussed. A gate-dimension dependent bi-modal gate leakage current was observed from ZrO2/Poly-Si transistors.

Original languageEnglish
Pages (from-to)455-458
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2 Dec 20015 Dec 2001

Fingerprint Dive into the research topics of 'Conventional n-channel MOSFET devices using single layer HfO<sub>2</sub> and ZrO<sub>2</sub> as high-k gate dielectrics with polysilicon gate electrode'. Together they form a unique fingerprint.

Cite this