Controlled heterogeneous nucleation and growth of germanium quantum dots on nanopatterned silicon dioxide and silicon nitride substrates

Kuan Hung Chen, Chung Yen Chien, Wei Ting Lai, Tom George, Axel Scherer, Pei-Wen Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Controlled heterogeneous nucleation and growth of Ge quantum dots (QDs) are demonstrated on SiO2/Si3N4 substrates by means of a novel fabrication process of thermally oxidizing nanopatterned SiGe layers. The otherwise random self-assembly process for QDs is shown to be strongly influenced by the nanopatterning in determining both the location and size of the QDs. Ostwald ripening processes are observed under further annealing at the oxidation temperature. Both nanopattern oxidation and Ostwald ripening offer additional mechanisms for lithography for controlling the size and placement of the QDs.

Original languageEnglish
Pages (from-to)3222-3226
Number of pages5
JournalCrystal Growth and Design
Volume11
Issue number7
DOIs
StatePublished - 6 Jul 2011

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