Control of optical loss in GaN-based planar cavities

L. Y. Ying, X. L. Hu, W. J. Liu, J. Y. Zhang, B. P. Zhang*, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Optical losses in GaN-based resonant planar cavity are discussed and experimentally examined in respects of indium tin oxide (ITO) inner-cavity current spreading layer, the defect-rich GaN layer, and multi-quantum well (MQW) active region. Devices with different structures are adopted to study the optical loss. It is demonstrated that a thin ITO layer and a coupled MQW active region are essential to achieve a low loss and high Q-value cavity. The results show that low-loss MQW design is particularly important in fabricating high-Q value GaN-based planar cavities.

Original languageEnglish
Pages (from-to)561-566
Number of pages6
JournalSuperlattices and Microstructures
Volume88
DOIs
StatePublished - 1 Dec 2015

Keywords

  • Gallium nitride
  • GaN
  • Optical loss
  • RCLED
  • VCSEL
  • Vertical cavity surface emitting lasers
  • Wide gap semiconductor

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