High-k/SiO2 interfacial properties are most critical factors determining the high-k gate MOSFET characteristics. We fabricated MOS capacitors of metal/HfO2/SiO2/Si structures in which were contained in the HfO2 layer. Flat-band voltage (VFB) shifts were measured by changing composition in metal/HfO2/(HfO2) 1-x(La2O3)x/SiO2/Si and metal/HfO2/(HfO2)1-x. (Sc2O 3)x/SiO2/Si structures. It was found that VFB shift arises mainly from high-k/SiO2 interface rather than metal/high-k interface. VFB could be effectively controlled by incorporating La2O3 or Sc2O3 near the high-k/SiO2 interface.
|Title of host publication||ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks|
|Number of pages||11|
|State||Published - 2007|
|Event||5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States|
Duration: 8 Oct 2007 → 10 Oct 2007
|Conference||5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting|
|Period||8/10/07 → 10/10/07|