Control of flat band voltage by partial incorporation of La 2O3 or Sc2O3 into HfO2 in metal/HfO2/SiO2/Si MOS capacitors

M. Adachi*, K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

High-k/SiO2 interfacial properties are most critical factors determining the high-k gate MOSFET characteristics. We fabricated MOS capacitors of metal/HfO2/SiO2/Si structures in which were contained in the HfO2 layer. Flat-band voltage (VFB) shifts were measured by changing composition in metal/HfO2/(HfO2) 1-x(La2O3)x/SiO2/Si and metal/HfO2/(HfO2)1-x. (Sc2O 3)x/SiO2/Si structures. It was found that VFB shift arises mainly from high-k/SiO2 interface rather than metal/high-k interface. VFB could be effectively controlled by incorporating La2O3 or Sc2O3 near the high-k/SiO2 interface.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages157-167
Number of pages11
Edition4
DOIs
StatePublished - 2007
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: 8 Oct 200710 Oct 2007

Publication series

NameECS Transactions
Number4
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period8/10/0710/10/07

Fingerprint Dive into the research topics of 'Control of flat band voltage by partial incorporation of La <sub>2</sub>O<sub>3</sub> or Sc<sub>2</sub>O<sub>3</sub> into HfO<sub>2</sub> in metal/HfO<sub>2</sub>/SiO<sub>2</sub>/Si MOS capacitors'. Together they form a unique fingerprint.

Cite this