Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application

F. C. Tung, M. C. Huang, T. S. Chin, Nguyen Chi Lang, P. S. Wu, Edward Yi Chang, J. H. Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Microcrystalline silicon thin films have been prepared through a mixture of silane and hydrogen gases using an excitation frequency of 40.68 MHz. For more cost reduction of solar cells, higher module efficiencies and deposition rates are required. This study tried to develop the low temperature processes of silicon thin film for solar cell deposition with a range of crystalline volume fractions around 60-75%. The microstructures of μc-Si intrinsic layer might be affected by the deposition parameters, such as power densities, substrate temperatures, the ratios of gas flow rates and deposition pressures. Based on the material analyses, an applicable structure of μc-Si film for solar cell application could be achieved.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages3748-3751
Number of pages4
DOIs
StatePublished - 20 Dec 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 20 Jun 201025 Jun 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period20/06/1025/06/10

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    Tung, F. C., Huang, M. C., Chin, T. S., Lang, N. C., Wu, P. S., Chang, E. Y., & Huang, J. H. (2010). Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 3748-3751). [5616051] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5616051