Contribution and control of neutral gas absorption effects in the plasma doping of boron into Si

K. Tsutsui*, R. Higaki, Y. Sasaki, T. Sato, H. Tamura, B. Mizuno, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In the low energy plasma doping process, the contribution of not only ionized species but also neutral species to the doping process should be considered. In order to investigate such a contribution, the experiments of gas phase doping combined with Ar or He plasma pre-treatment were carried out. Gas phase impurity absorption should be affected by surface condition of Si substrates. As a result, significant increase of boron dose from neutral gas phase was observed when the substrate surface was pre-treated by Ar or He plasma prior to exposure to neutral B2H6/He gas. It was also found that the gas phase impurity absorption was affected by substrate temperature when the surface was exposed to the neutral B2H 6/He gas.

Original languageEnglish
Title of host publicationExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
EditorsX.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages46-49
Number of pages4
Volume4
ISBN (Print)7309039157
StatePublished - 2004
EventExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China
Duration: 15 Mar 200416 Mar 2004

Conference

ConferenceExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
CountryChina
CityShanghai
Period15/03/0416/03/04

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