Continuous wave visible InGaP/InGaAlP quantum well surface emitting laser diodes

Kai-Feng Huang*, K. Tai, C. C. Wu, J. D. Wynn

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Recently electrical injected visible vertical surface emitting lasers (VCSELs) have been reported with a pulsed threshold current of about 30 mA. In this paper we report for the first time the continuous wave (cw) operation of such visible VCSEL diodes. In conclusion we have fabricated visible gain-guided surface emitting laser incorporating In0.5GA0.5P/ In0.5Al0.35Ga0.15P quantum wells Al0.5Ga0.5As /AlAs DBRS. Cw operation was achieved for temperature up to -25 C with a low threshold current of 4.6 mA. Fine adjustment on layer thickness and optimization in the proton implantation steps may yield room temperature continuous operation.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting
PublisherPubl by IEEE
Pages613-614
Number of pages2
ISBN (Print)0780312635
DOIs
StatePublished - 1 Dec 1993
EventAnnual Meeting of the IEEE Lasers and Electro-Optics Society - San jose, CA, USA
Duration: 15 Nov 199318 Nov 1993

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting

Conference

ConferenceAnnual Meeting of the IEEE Lasers and Electro-Optics Society
CitySan jose, CA, USA
Period15/11/9318/11/93

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