Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

J. S. Wang*, Kuo-Jui Lin, R. S. Hsiao, C. S. Yang, C. M. Lai, C. Y. Liang, H. Y. Liu, T. T. Chen, Y. F. Chen, J. Y. Chi, Jenn-Fang Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

High-power 3μm-wide narrow-ridge-waveguide lasers with ten stacks of electronic vertically coupled InAs/GaAs quantum dots in the active region were demonstrated. Unlike that from conventional uncoupled InAs quantum dot lasers, a narrow lasing spectrum was observed because the carriers tunneled in the vertical direction. Continuous-wave operation in single lateral mode yielded a kink-free output power of 320 mW with an efficiency of 0.46 W/A , and a sensitivity of lasing wavelength to temperature of 0.28 nm/K.

Original languageEnglish
Pages (from-to)1097-1100
Number of pages4
JournalApplied Physics B: Lasers and Optics
Volume81
Issue number8
DOIs
StatePublished - 25 Oct 2005

Keywords

  • GaAs
  • Lasing Spectrum
  • Single Mode Operation
  • Continuous Wave Operation
  • High Excitation Power

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