Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells

R. C. Tu*, Y. K. Su, D. Y. Lin, C. F. Li, Y. S. Huang, W. H. Lan, S. L. Tu, S. J. Chang, S. C. Chou, Wu-Ching Chou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We have studied various excitonic transitions of strained Zn0.79Cd0.21Se/ZnSe double quantum wells, grown by molecular beam epitaxy on (100) GaAs substrates, using contactless dectroreflectance (CER) at 15 and 300 K. A number of intersub-band transitions in the CER spectra from the sample have been observed. An analysis of the CER spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light )-hole band state. The conduction-band offset Qc is used as on adjustable parameter to study the band offset in the strained Zn0.79Cd0.21Se/ZnSe system. The value of Qc is determined to be 0.67±0.03.

Original languageEnglish
Pages (from-to)1043-1048
Number of pages6
JournalJournal of Applied Physics
Volume83
Issue number2
DOIs
StatePublished - 15 Jan 1998

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