Contact resistivity of shallow junctions formed by implantation through Pt or PtSi

Bing-Yue Tsui*, Mao Chieh Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The specific contact resistance (ρ{variant}c) of PtSi/p+ and PtSi/n+ contacts formed by ion implantation through Pt or PtSi was studied. A simple process to form self-aligned six-terminal Kelvin structure was developed in order to measure the specific contact resistance. For the PtSi/p+ contact system, a ρ{variant}c lower than 1 × 10-6 ω-cm2 was achieved by BF2+ implantation at 40 keV to a dose of 5 × 1015 cm-2. Increase of dose or energy could further decrease the ρc to be lower than 5 × 10-7 ω-cm2. The ρc of the PtSi/n+ contact system was lower than that of the PtSi/p+ contact system and a ρ{variant}c of 1 × 10-7 ω-cm2 was obtained. These results indicate that although the PtSi-contacted junction is formed at temperatures lower than 800°C, the ρ{variant}c is low enough to satisfy the requirements of submicrometer technology. We suggest that PtSi should be a favorable material to form shallow junctions and contacts simultaneously for future VLSI processes and to satisfy low thermal budget requirement.

Original languageEnglish
Pages (from-to)1217-1222
Number of pages6
JournalSolid State Electronics
Volume35
Issue number9
DOIs
StatePublished - 1 Jan 1992

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