Contact resistance reduction on layered MoS 2 by Ar plasma pre-treatment

Yen Teng Ho, Yung Ching Chu, Chao An Jong, Hung Yi Chen, Meng Wei Lin, Ming Zhang, Po Yen Chien, Yung Yi Tu, Jason Woo, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The effect of resistance (Rc) reduction of Ti/Au contact on MoS 2 by ICP Ar plasma pretreatment is presented. The lowest Rc of 1.72 ohm-cm was achieved with the ICP treatment condition of 50W (ICP) /2W (chuck) for 10 sec. Compared with the contact without treatment (19.6 ohm-cm), the Rc improves over 10 times, demonstrating the advantage of Ar plasma pre-treatment on MoS 2 contact.

Original languageEnglish
Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages52-53
Number of pages2
ISBN (Electronic)9781509007264
DOIs
StatePublished - 27 Sep 2016
Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
Duration: 12 Jun 201613 Jun 2016

Publication series

Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
CountryUnited States
CityHonolulu
Period12/06/1613/06/16

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