Contact Resistance Measurement of Bonded Copper Interconnects for Three-Dimensional Integration Technology

Kuan-Neng Chen*, A. Fan, C. S. Tan, R. Reif

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10-8 Ω-cm2 are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.

Original languageEnglish
Pages (from-to)10-12
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number1
DOIs
StatePublished - 1 Jan 2004

Keywords

  • 3-D integration technology
  • Bonded interconnects
  • Contact resistance
  • Copper wafer bonding

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