Contact Resistance Measurement of Bonded Copper Interconnects for Three-Dimensional Integration Technology

Kuan-Neng Chen; A. Fan; C. S. Tan; R. Reif

doi:10.1109/LED.2003.821591

Contact Resistance Measurement of Bonded Copper Interconnects for Three-Dimensional Integration Technology

Kuan-Neng Chen^*, A. Fan, C. S. Tan, R. Reif

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10^-8 Ω-cm² are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.

Original language	English
Pages (from-to)	10-12
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	1
DOIs	https://doi.org/10.1109/LED.2003.821591
State	Published - 1 Jan 2004

Keywords

3-D integration technology
Bonded interconnects
Contact resistance
Copper wafer bonding

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@article{1b708ee4a49d4a71b378176ddb813a21,

title = "Contact Resistance Measurement of Bonded Copper Interconnects for Three-Dimensional Integration Technology",

abstract = "A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10-8 Ω-cm2 are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.",

keywords = "3-D integration technology, Bonded interconnects, Contact resistance, Copper wafer bonding",

author = "Kuan-Neng Chen and A. Fan and Tan, {C. S.} and R. Reif",

year = "2004",

month = jan,

day = "1",

doi = "10.1109/LED.2003.821591",

language = "English",

volume = "25",

pages = "10--12",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Contact Resistance Measurement of Bonded Copper Interconnects for Three-Dimensional Integration Technology

AU - Chen, Kuan-Neng

AU - Fan, A.

AU - Tan, C. S.

AU - Reif, R.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10-8 Ω-cm2 are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.

AB - A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10-8 Ω-cm2 are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.

KW - 3-D integration technology

KW - Bonded interconnects

KW - Contact resistance

KW - Copper wafer bonding

UR - http://www.scopus.com/inward/record.url?scp=0346076629&partnerID=8YFLogxK

U2 - 10.1109/LED.2003.821591

DO - 10.1109/LED.2003.821591

M3 - Article

AN - SCOPUS:0346076629

VL - 25

SP - 10

EP - 12

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

ER -