Contact reaction between Si and rare earth metals

R. D. Thompson*, B. Y. Tsaur, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

154 Scopus citations

Abstract

Reactions between Si and thin films of rare-earth metals (Gd, Dy, Ho, Er, plus Y and La) in the temperature range of 275-900°C have been studied by using x-ray diffraction and ion backscattering spectrometry. The disilicides of these metals are apparently the first phase to form, forming rapidly within a narrow temperature range (325-400°C), and are stable up to 900°C. The growth does not follow a layered growth mode.

Original languageEnglish
Pages (from-to)535-537
Number of pages3
JournalApplied Physics Letters
Volume38
Issue number7
DOIs
StatePublished - 1 Dec 1981

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