Contact for shallow junctions

King-Ning Tu*

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A brief review of the formation process and Schottky behavior of shallow silicide contacts is presented. Both silicon alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85-0.75 eV) and low (0.50-0.40 eV) Schottky contacts have been demonstrated.

Original languageEnglish
Pages (from-to)71-78
Number of pages8
JournalThin Solid Films
Volume140
Issue number1
DOIs
StatePublished - 16 Jun 1986

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