Accurate modeling of the hot electron induced gate and substrate currents is of considerable importance for submicron MOS devices. In this paper, a new approach based on the simplified two-dimensional energy balance equations by incorporating the effect of transversal electric field and energy-dependent saturation velocity and relaxation time is presented. Substrate current characteristics can be predicted from the calculated energy dependent impact ionization rate. A consistent gate current is also obtained by using the same set of parameter values. Results of the gate and substrate currents present very good agreement with the experiment for a wide range of biases and channel lengths. Moreover, the conventional Drift-Diffusion approach tends to overestimate the calculated substrate current, while the new approach has solved the problem without difficulty.
|Number of pages||4|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan|
Duration: 31 May 1995 → 2 Jun 1995
|Conference||Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications|
|Period||31/05/95 → 2/06/95|