Consistent gate and substrate current model for submicron MOSFET's by considering energy transport

C. M. Yih*, G. H. Lee, Steve S. Chung

*Corresponding author for this work

Research output: Contribution to conferencePaper

2 Scopus citations

Abstract

Accurate modeling of the hot electron induced gate and substrate currents is of considerable importance for submicron MOS devices. In this paper, a new approach based on the simplified two-dimensional energy balance equations by incorporating the effect of transversal electric field and energy-dependent saturation velocity and relaxation time is presented. Substrate current characteristics can be predicted from the calculated energy dependent impact ionization rate. A consistent gate current is also obtained by using the same set of parameter values. Results of the gate and substrate currents present very good agreement with the experiment for a wide range of biases and channel lengths. Moreover, the conventional Drift-Diffusion approach tends to overestimate the calculated substrate current, while the new approach has solved the problem without difficulty.

Original languageEnglish
Pages127-130
Number of pages4
StatePublished - 1 Dec 1995
EventProceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
Duration: 31 May 19952 Jun 1995

Conference

ConferenceProceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications
CityTaipei, Taiwan
Period31/05/952/06/95

Fingerprint Dive into the research topics of 'Consistent gate and substrate current model for submicron MOSFET's by considering energy transport'. Together they form a unique fingerprint.

  • Cite this

    Yih, C. M., Lee, G. H., & Chung, S. S. (1995). Consistent gate and substrate current model for submicron MOSFET's by considering energy transport. 127-130. Paper presented at Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications, Taipei, Taiwan, .