Conduction mechanisms for off-state leakage of poly-Si thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate

Horng-Chih Lin, M. Yu, Guo Hua Chen, Tiao Yuan Huang, Tan Fu Le

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have recently (2001) proposed a new field-induction-drain (FID) structure with a bottom sub-gate, which would make the manufacturing process more flexible. However, detailed characterization on the leakage characteristics of such bottom sub-gate devices is still lacking. We therefore carried out this study to explore this issue by fabricating and characterizing both n- and p-channel TFTs with bottom sub-gate.

Original languageEnglish
Title of host publication2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages134-137
Number of pages4
ISBN (Electronic)0780374320, 9780780374324
DOIs
StatePublished - 1 Jan 2001
EventInternational Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States
Duration: 5 Dec 20017 Dec 2001

Publication series

Name2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2001
CountryUnited States
CityWashington
Period5/12/017/12/01

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