Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors

Kuan Lin Yeh*, Horng-Chih Lin, Rou Gu Huang, Ren Wei Tsai, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Conduction mechanisms for the off-state leakage in Schottky barrier thin-film transistor were explored. It was found that the field-emission process dominates the leakage conduction of the device with the conventional structure as the field strength in the drain junction becomes high, and results in the strong gate-induced drain leakage (GIDL) like phenomenon. In contrast, for the device with a field-induced-drain structure, the high-field region is pulled away from the silicided drain. As a result, the field-emission conduction is eliminated, so the GIDL-like leakage current is effectively suppressed.

Original languageEnglish
Pages (from-to)635-637
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number5
DOIs
StatePublished - 30 Jul 2001

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