Conduction mechanism and temperature-dependent current-voltage in (Ba, Sr)TiO3 thin films

M. S. Tsai*, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

RF magnetron sputtered (Ba, Sr)TiO3 (BST) thin films were deposited on Pt/SiO substrate with various O2/(O2 + Ar) mixing ratios (OMR) ranging from 0 to 60%. Two possible conduction mechanisms of the BST thin films, the Poole-Frenkel (PF) transport (bulk limited conduction) and the Schottky emission (SE) (electrode limited conduction) were studied. Experimental results indicated that the BST films prepared at low OMR (0-25%) exhibit the SE mechanism dominated below the transition electric field of 490 kV/cm and the PF transport mechanism dominated beyond 490 kV/cm; and while those prepared at high OMR (40-60%) display the SE mechanism dominated both below and beyond the transition electric field. The difference in dominant mechanism (bulk and electrode limited conduction) between films was ascribed to concentration variation of the oxygen vacancy in the films.

Original languageEnglish
Pages (from-to)2853-2860
Number of pages8
JournalJournal of the Electrochemical Society
Volume145
Issue number8
DOIs
StatePublished - 1 Jan 1998

Fingerprint Dive into the research topics of 'Conduction mechanism and temperature-dependent current-voltage in (Ba, Sr)TiO<sub>3</sub> thin films'. Together they form a unique fingerprint.

Cite this