Conduction behavior of V-SrZrO 3 thin film showing resistive switching

Chun Hung Lai*, Chih Yi Liu, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

This paper examines the electrical properties of V-doped SrZrO3 sputtered films showing bistable on/off resistive switching. The temperature dependence of dc sweep I-V data in the range of 25-100°C implies the prominent role played by the off-state conduction in determining the R-switch ratio. The defects in off-state are investigated via Frenkel-Poole relation and the associated trap energy extraction. It is found that the oxygen vacancies are the possible major defects in off-state and are verified by the treatment of N2 and O2 annealing ambience hereafter. The nearly unchanged currents suggest the relatively more stable nature in on-state, which is consistent with the following findings: 1) the frequently observed I-V jiggle during on to off switching, 2) successful forming only found for sweep direction to on-state, 3) the better thermal disturbance immunity by longer retention for on-state, 4) the shorter pulse width needed to on-state switching for electric pulse induced resistance (EPIR) effect.

Original languageEnglish
Pages (from-to)21-26
Number of pages6
JournalFerroelectrics
Volume385
Issue number1 PART 6
DOIs
StatePublished - 1 Dec 2009
Event6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan
Duration: 2 Aug 20086 Aug 2008

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