Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography

Shyi Long Shy*, Tien-Sheng Chao, Tan F. Lei, Shaw An Chen, Wen An Loong, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

In this paper, the deep submicron complementary metal-oxide- semiconductor (CMOS) devices were fabricated. A conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography is used for direct writing the critical polysilicon gate level. Most of the specification of the designed CMOS parameters are met. The optimum conditions for submicron to 0.15 micrometers line/space of polysilicon gate using PAPSAH as charge dissipation layer for e-beam lithography are also established.

Original languageEnglish
Pages (from-to)454-465
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2884
DOIs
StatePublished - 1 Dec 1996
Event16th Annual BACUS Symposium on Photomask Technology and Management - Redwood City, CA, United States
Duration: 18 Sep 199618 Sep 1996

Keywords

  • Electron beam lithography
  • Mix-and-match lithography
  • Poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH)

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