Conductance mapping for the electron and hole energy levels in InAs/GaAs self-assembled quantum dots

Wen-Hao Chang, Tzu Min Hsu, Wen Yen Chen, Hsiang Szu Chang, Nien Tzu Yeh, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The authors study admittance spectroscopy of the electron and hole levels in InAs/GaAs self-assembled quantum dots. From the conductance mapping for the electron and hole levels in dots, clear s-and p-shell structures can be resolved.

Original languageEnglish
Title of host publication2003 International Symposium on Compound Semiconductors, ISCS 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages93-94
Number of pages2
ISBN (Electronic)0780378202
DOIs
StatePublished - 1 Jan 2003
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 25 Aug 200327 Aug 2003

Publication series

NameIEEE International Symposium on Compound Semiconductors, Proceedings
Volume2003-January

Conference

Conference2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period25/08/0327/08/03

Keywords

  • Charge carrier processes
  • Diodes
  • Electrons
  • Energy states
  • Gallium arsenide
  • Quantum dot lasers
  • Quantum dots
  • Spectroscopy
  • Tunneling
  • US Department of Transportation

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