Abstract
Tunnel diodes, also known as Esaki diodes, play an important role in III-V multi junction solar cells. In this work, we theoretically investigated the electrical characteristics of a GaAs tunnel diode and its performance against the illumination conditions such as light intensity, spatial profile, etc. We then developed a methodology to optimize a triple junction InGap/GaAs/Ge solar cell with a GaAs tunnel junction. The conversion efficiency drops with the increase of the concentration ratio is also discussed.
| Original language | English |
|---|---|
| Title of host publication | Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 |
| Pages | 486-488 |
| Number of pages | 3 |
| DOIs | |
| State | Published - 1 Dec 2011 |
| Event | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Conference
| Conference | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 |
|---|---|
| Country | United States |
| City | Seattle, WA |
| Period | 19/06/11 → 24/06/11 |
Fingerprint Dive into the research topics of 'Concentration effects of tunnel diode for optimizations of multi-junction solar cells'. Together they form a unique fingerprint.
Cite this
Hong, G. H., & Yu, P-C. (2011). Concentration effects of tunnel diode for optimizations of multi-junction solar cells. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 486-488). [6185999] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6185999