Computer simulation of germanium nanowire field effect transistors

Yiming Li*, Hung Mu Chou, Bo Shian Lee, Chien Sung Lu, Shao Ming Yu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

In this paper, electrical characteristics of germanium (Ge) nanowire field effect transistors (FETs) are computationally investigated. A calibrated three-dimensional (3D) density-gradient simulation is performed to explore the electrical characteristics of Ge omega-shaped-gate FETs. The examined nanodevices are with a 70% gate coverage ratio. By evaluating the threshold voltage roll-off, the transfer characteristics, and the leakage current, our numerical results have shown that the Ge nanowire FET has potentially higher driving-capability than that of the silicon (Si) one. Due to good channel controllability of the omega-shaped-gate FET with the 70% gate coverage ratio, compared with the Si nanowire FET, the high mobility Ge nanowire FET significantly suppresses the effect of band-gap narrowing on the transport characteristics. Leakage current of the Ge nanowire FET depends upon the thickness of the gate channel film. A thinner Ge film leads to a lower leakage current. Preliminary numerical study on the Ge Nanowire FET with a propoer selection on gate material provides interesting results for the design and fabrication of high performance nanodevices in nanoelectronics era.

Original languageEnglish
Title of host publication2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Pages227-230
Number of pages4
StatePublished - 2005
Event2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 - Tokyo, Japan
Duration: 1 Sep 20053 Sep 2005

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2005

Conference

Conference2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
CountryJapan
CityTokyo
Period1/09/053/09/05

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  • Cite this

    Li, Y., Chou, H. M., Lee, B. S., Lu, C. S., & Yu, S. M. (2005). Computer simulation of germanium nanowire field effect transistors. In 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 (pp. 227-230). [1562066] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2005).