Computer simulation of electron energy states for three-dimensional InAs/GaAs semiconductor quantum rings

Yi-Ming Li*, O. Voskoboynikov, C. P. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, (iii) the finite hard wall confinement potential, and (iv) the Ben Daniel-Duke boundary conditions. We solve the 3D model by nonlinear iterative algorithm to obtain self-consistent solutions. The model and simulation provide a novel way to calculate the energy levels of nano-scopic semiconductor quantum ring. They are useful to clarify the principal dependencies of quantum ring energy states on material band parameter, ring size and shape.

Original languageEnglish
Title of host publication2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
EditorsM. Laudon, B. Romanowicz
Pages431-434
Number of pages4
StatePublished - 2002
Event2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 - San Juan, Puerto Rico
Duration: 21 Apr 200225 Apr 2002

Publication series

Name2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

Conference

Conference2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
CountryPuerto Rico
CitySan Juan
Period21/04/0225/04/02

Keywords

  • Computer simulatuion
  • Electronic state
  • InAs/GaAs
  • Semiconductor quantum ring

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