Compressive strain induced heavy hole and light hole splitting of Zn1-xCdxSe epilayers grown by molecular beam epitaxy

C. S. Yang; Y. P. Hsieh; M. C. Kuo; P. Y. Tseng; Z. W. Yeh; K. C. Chiu; J. L. Shen; A. H.M. Chu; Wu-Ching Chou; W. H. Lan

doi:10.1016/S0254-0584(01)00585-5

Compressive strain induced heavy hole and light hole splitting of Zn_1-xCd_xSe epilayers grown by molecular beam epitaxy

C. S. Yang, Y. P. Hsieh, M. C. Kuo, P. Y. Tseng, Z. W. Yeh, K. C. Chiu, J. L. Shen, A. H.M. Chu, Wu-Ching Chou^*, W. H. Lan

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article

8 Scopus citations

Abstract

Compressive strain induced heavy hole and light hole splitting of the Zn_1-xCd_xSe epilayers grown by molecular beam epitaxy was studied by the reflectivity spectra. Heavy hole exciton (HHX) and light hole exciton (LHX) splittings for the ZnSe, Zn_0.999Cd_0.001Se, Zn_0.987Cd_0.013Se, and Zn_0.974Cd_0.026Se epilayers are 12.6, 14.0, 17.2 and 20.4 meV, respectively. HHX and LHX energy splitting depends linearly on the Cd composition. No strain relaxation was observed in these thin (about 50 nm) Zn_1-xCd_xSe epilayers. A simplified dielectric model was used to fit the reflectivity spectra. At 10 K, the obtained oscillator strength and broadening parameter are about 2.7×10^-2eV² and 2.6me V for HHX and 1.2×10^-2eV² and 2.6 me V for LHX. Temperature dependence of HHX and LHX transition energy was fitted by Varshni's and O'Donnell's model. No clear temperature dependence was found for the HHX and LHX splitting.

Original language	English
Pages (from-to)	602-607
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	78
Issue number	3
DOIs	https://doi.org/10.1016/S0254-0584(01)00585-5
State	Published - 28 Feb 2003

Keywords

Compressive strain
Heavy hole
Light hole
Molecular beam epitaxy
Reflectivity
ZnCdSe

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Yang, C. S., Hsieh, Y. P., Kuo, M. C., Tseng, P. Y., Yeh, Z. W., Chiu, K. C., Shen, J. L., Chu, A. H. M., Chou, W-C., & Lan, W. H. (2003). Compressive strain induced heavy hole and light hole splitting of Zn_1-xCd_xSe epilayers grown by molecular beam epitaxy. Materials Chemistry and Physics, 78(3), 602-607. https://doi.org/10.1016/S0254-0584(01)00585-5

@article{30f303a9d4ef4ba9a854fccd28591f14,

title = "Compressive strain induced heavy hole and light hole splitting of Zn1-xCdxSe epilayers grown by molecular beam epitaxy",

abstract = "Compressive strain induced heavy hole and light hole splitting of the Zn1-xCdxSe epilayers grown by molecular beam epitaxy was studied by the reflectivity spectra. Heavy hole exciton (HHX) and light hole exciton (LHX) splittings for the ZnSe, Zn0.999Cd0.001Se, Zn0.987Cd0.013Se, and Zn0.974Cd0.026Se epilayers are 12.6, 14.0, 17.2 and 20.4 meV, respectively. HHX and LHX energy splitting depends linearly on the Cd composition. No strain relaxation was observed in these thin (about 50 nm) Zn1-xCdxSe epilayers. A simplified dielectric model was used to fit the reflectivity spectra. At 10 K, the obtained oscillator strength and broadening parameter are about 2.7×10-2eV2 and 2.6me V for HHX and 1.2×10-2eV2 and 2.6 me V for LHX. Temperature dependence of HHX and LHX transition energy was fitted by Varshni's and O'Donnell's model. No clear temperature dependence was found for the HHX and LHX splitting.",

keywords = "Compressive strain, Heavy hole, Light hole, Molecular beam epitaxy, Reflectivity, ZnCdSe",

author = "Yang, {C. S.} and Hsieh, {Y. P.} and Kuo, {M. C.} and Tseng, {P. Y.} and Yeh, {Z. W.} and Chiu, {K. C.} and Shen, {J. L.} and Chu, {A. H.M.} and Wu-Ching Chou and Lan, {W. H.}",

year = "2003",

month = feb,

day = "28",

doi = "10.1016/S0254-0584(01)00585-5",

language = "English",

volume = "78",

pages = "602--607",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier BV",

number = "3",

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Compressive strain induced heavy hole and light hole splitting of Zn_1-xCd_xSe epilayers grown by molecular beam epitaxy. / Yang, C. S.; Hsieh, Y. P.; Kuo, M. C.; Tseng, P. Y.; Yeh, Z. W.; Chiu, K. C.; Shen, J. L.; Chu, A. H.M.; Chou, Wu-Ching; Lan, W. H.

In: Materials Chemistry and Physics, Vol. 78, No. 3, 28.02.2003, p. 602-607.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Compressive strain induced heavy hole and light hole splitting of Zn1-xCdxSe epilayers grown by molecular beam epitaxy

AU - Yang, C. S.

AU - Hsieh, Y. P.

AU - Kuo, M. C.

AU - Tseng, P. Y.

AU - Yeh, Z. W.

AU - Chiu, K. C.

AU - Shen, J. L.

AU - Chu, A. H.M.

AU - Chou, Wu-Ching

AU - Lan, W. H.

PY - 2003/2/28

Y1 - 2003/2/28

N2 - Compressive strain induced heavy hole and light hole splitting of the Zn1-xCdxSe epilayers grown by molecular beam epitaxy was studied by the reflectivity spectra. Heavy hole exciton (HHX) and light hole exciton (LHX) splittings for the ZnSe, Zn0.999Cd0.001Se, Zn0.987Cd0.013Se, and Zn0.974Cd0.026Se epilayers are 12.6, 14.0, 17.2 and 20.4 meV, respectively. HHX and LHX energy splitting depends linearly on the Cd composition. No strain relaxation was observed in these thin (about 50 nm) Zn1-xCdxSe epilayers. A simplified dielectric model was used to fit the reflectivity spectra. At 10 K, the obtained oscillator strength and broadening parameter are about 2.7×10-2eV2 and 2.6me V for HHX and 1.2×10-2eV2 and 2.6 me V for LHX. Temperature dependence of HHX and LHX transition energy was fitted by Varshni's and O'Donnell's model. No clear temperature dependence was found for the HHX and LHX splitting.

AB - Compressive strain induced heavy hole and light hole splitting of the Zn1-xCdxSe epilayers grown by molecular beam epitaxy was studied by the reflectivity spectra. Heavy hole exciton (HHX) and light hole exciton (LHX) splittings for the ZnSe, Zn0.999Cd0.001Se, Zn0.987Cd0.013Se, and Zn0.974Cd0.026Se epilayers are 12.6, 14.0, 17.2 and 20.4 meV, respectively. HHX and LHX energy splitting depends linearly on the Cd composition. No strain relaxation was observed in these thin (about 50 nm) Zn1-xCdxSe epilayers. A simplified dielectric model was used to fit the reflectivity spectra. At 10 K, the obtained oscillator strength and broadening parameter are about 2.7×10-2eV2 and 2.6me V for HHX and 1.2×10-2eV2 and 2.6 me V for LHX. Temperature dependence of HHX and LHX transition energy was fitted by Varshni's and O'Donnell's model. No clear temperature dependence was found for the HHX and LHX splitting.

KW - Compressive strain

KW - Heavy hole

KW - Light hole

KW - Molecular beam epitaxy

KW - Reflectivity

KW - ZnCdSe

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U2 - 10.1016/S0254-0584(01)00585-5

DO - 10.1016/S0254-0584(01)00585-5

M3 - Article

AN - SCOPUS:0037469529

VL - 78

SP - 602

EP - 607

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 3

ER -