Recent studies on poly-Si gate etching showed that the oxide near the gate edge may be damaged by radiation exposure and/or ion bombardment. In this work, it is observed that radiation occurs during the whole plasma turn-on period. Radiation characteristic are studied systematically. The impact of radiation on gate oxide integrity is also discussed.
|Number of pages||3|
|State||Published - 1 Jan 1996|
|Event||Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA|
Duration: 13 May 1996 → 14 May 1996
|Conference||Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID|
|City||Santa Clara, CA, USA|
|Period||13/05/96 → 14/05/96|