Comprehensive study on radiation damage in plasma system

Bing-Yue Tsui*, Shunn Her Liu, Geeng Lih Lin, Jau Hwang Ho, Chia Haur Chang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

Recent studies on poly-Si gate etching showed that the oxide near the gate edge may be damaged by radiation exposure and/or ion bombardment. In this work, it is observed that radiation occurs during the whole plasma turn-on period. Radiation characteristic are studied systematically. The impact of radiation on gate oxide integrity is also discussed.

Original languageEnglish
Pages148-150
Number of pages3
DOIs
StatePublished - 1 Jan 1996
EventProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA
Duration: 13 May 199614 May 1996

Conference

ConferenceProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
CitySanta Clara, CA, USA
Period13/05/9614/05/96

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