Using an external tuner-based method, this paper demonstrates a complete millimeter-wave noise characterization and modeling up to 60 GHz for 65nm MOSFETs for the first time. Due to channel length modulation, the channel noise continues to increase and remains the most important noise source in the millimeter-wave band. Our experimental results further show that, with the downscaling of channel length, the gate resistance has more serious impact on the high-frequency noise parameters than the substrate resistance even in the millimeter-wave frequency.
|Number of pages||7|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|State||Published - 1 Apr 2010|
- Millimeter wave