Comprehensive noise characterization and modeling for 65-nm MOSFETs for millimeter-wave applications

Sheng Chun Wang*, Pin Su, Kun Ming Chen, Kuo Hsiang Liao, Bo Yuan Chen, Sheng Yi Huang, Cheng Chou Hung, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

Using an external tuner-based method, this paper demonstrates a complete millimeter-wave noise characterization and modeling up to 60 GHz for 65nm MOSFETs for the first time. Due to channel length modulation, the channel noise continues to increase and remains the most important noise source in the millimeter-wave band. Our experimental results further show that, with the downscaling of channel length, the gate resistance has more serious impact on the high-frequency noise parameters than the substrate resistance even in the millimeter-wave frequency.

Original languageEnglish
Article number5427061
Pages (from-to)740-746
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume58
Issue number4
DOIs
StatePublished - 1 Apr 2010

Keywords

  • Millimeter wave
  • MOSFET
  • Noise
  • RF

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