Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs

Tian-Li Wu, Denis Marcon, Mohammed B. Zahid, Marleen Van Hove, Stefaan Decoutere, Guido Groeseneken

Research output: Chapter in Book/Report/Conference proceedingConference contribution

40 Scopus citations

Abstract

This paper reports on a comprehensive on-state reliability evaluation on depletion-mode (VTH∼-4V) AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) with a bi-layer dielectric (in-situ Si3N4/Al2O3). We have studied the strength and the lifetime of the dielectric to breakdown by means of a Time Dependent Dielectric Breakdown (TDDB) experiment performed at 200°C and the trapping effects induced by applying a positive gate voltage stress. Additionally, for the first time, we have studied the effect of the on-state stress as a function of the drain voltage. The results show that 1) Based on a Time Dependent Dielectric Breakdown (TDDB) evaluation, an applied gate voltage stress of +6V for the lifetime of 20 years can be extrapolated at 200°C. 2) By fitting with a power law, applying +1V gate voltage for 20 years leads to a threshold voltage shift of 0.2V. This guarantees a good reliability margin when these devices are used in cascode switching circuit applications. 3) A new mechanism of high junction temperature thermal de-trapping was observed during a high drain bias stress.

Original languageEnglish
Title of host publication2013 IEEE International Reliability Physics Symposium, IRPS 2013
DOIs
StatePublished - 7 Aug 2013
Event2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States
Duration: 14 Apr 201318 Apr 2013

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2013 IEEE International Reliability Physics Symposium, IRPS 2013
CountryUnited States
CityMonterey, CA
Period14/04/1318/04/13

Keywords

  • GaN
  • MIS-HEMTs
  • On-state Stress
  • Power Devices
  • Reliability

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