Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications

Po Chien Chou*, Ting En Hsieh, Stone Cheng, Jesús A. Del Alamo, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal-insulator-semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface- and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the off-state current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies.

Original languageEnglish
Article number055012
JournalSemiconductor Science and Technology
Volume33
Issue number5
DOIs
StatePublished - 23 Apr 2018

Keywords

  • dynamic R
  • failure mechanisms
  • GaN MIS-HEMT
  • hot electrons
  • reliability
  • trapping related degradation

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