Composition dependence of infrared optical phonon modes in AlGaN epilayers grown on sapphire substrates

Jun Rong Chen*, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We reported the systematical study of optical anisotropy of Al xGa1-xN epitaxial films grown on sapphire using FTIR measurements. The experimental data can be theoretically fitted by employing a four-phase layered model. Several specific absorption dips were observed when the aluminum composition is larger than 24%. The dip intensity increases with the aluminum compositions. According to the reciprocal space map measurements, these dips may be induced due to the effects of strain relaxation in AlGaN epitaxial layers.

Original languageEnglish
Title of host publication2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs
StatePublished - 15 Sep 2008
EventConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States
Duration: 4 May 20089 May 2008

Publication series

Name2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Conference

ConferenceConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
CountryUnited States
CitySan Jose, CA
Period4/05/089/05/08

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