Composition dependence of infrared optical phonon modes in AlGaN epilayers grown on sapphire substrates

Jun Rong Chen, Tien-chang Lu*, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We reported the systematical study of optical anisotropy of AlxGa1-xN epitaxial films grown on sapphire using FTIR measurements. The experimental data can be theoretically fitted by employing a four-phase layered model. Several specific absorption dips were observed when the aluminum composition is larger than 24%. The dip intensity increases with the aluminum compositions. According to the reciprocal space map measurements, these dips may be induced due to the effects of strain relaxation in AlGaN epitaxial layers.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2008
PublisherOptical Society of America
ISBN (Print)9781557528599
StatePublished - 1 Jan 2008
EventQuantum Electronics and Laser Science Conference, QELS 2008 - San Jose, CA, United States
Duration: 4 May 20089 May 2008

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2008
CountryUnited States
CitySan Jose, CA
Period4/05/089/05/08

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