A metamorphic high-electron-mobility transistor (MHEMT) with In 0.55 Ga 0.45 As/In 0.67 Ga 0.33 As/In 0.55 Ga 0.45 As composite channel layers was developed for low-noise and high-linearity applications. The use of a composite channel results in high electron mobility and good confinement of electrons in the channel region which are the desired characteristics of low-noise and high-linearity devices. The noise figure of the 0.25 × 160 μm 2 devices is 0.23 dB with 15.06 dB associated gain, and the output third-order intercept point (IP3) is 18.67 dBm at 6 GHz. The device shows great potential for high-linearity and low-noise applications at high frequencies.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||7 A|
|State||Published - 1 Jul 2004|
- Composite channel
- High linearity
- Low noise