Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applications

Edward Yi Chang*, Yueh Chin Lin, Guan Ji Chen, Huang Ming Lee, Guo Wei Huang, D. Biswas, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A metamorphic high-electron-mobility transistor (MHEMT) with In 0.55 Ga 0.45 As/In 0.67 Ga 0.33 As/In 0.55 Ga 0.45 As composite channel layers was developed for low-noise and high-linearity applications. The use of a composite channel results in high electron mobility and good confinement of electrons in the channel region which are the desired characteristics of low-noise and high-linearity devices. The noise figure of the 0.25 × 160 μm 2 devices is 0.23 dB with 15.06 dB associated gain, and the output third-order intercept point (IP3) is 18.67 dBm at 6 GHz. The device shows great potential for high-linearity and low-noise applications at high frequencies.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number7 A
DOIs
StatePublished - 1 Jul 2004

Keywords

  • Composite channel
  • High linearity
  • IP3
  • Low noise
  • MHEMT

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