Complementary UWB LNA design using asymmetrical inductive source degeneration

Hui I. Wu*, Shu-I Hu, Christina F. Jou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

This letter proposes a novel LNA design method where the complementary transistor topology is combined with asymmetrical inductive source degeneration to achieve matched input impedance over a wide bandwidth. A 210 GHz LNA is designed and fabricated using a commercial 0.18 μm RF-CMOS process to verify the feasibility of our proposed method. In the intended bandwidth, this LNA has matched input impedance, 20 dB power gain, and 2.43.4 dB noise figure, with 25.65 mW power consumption.

Original languageEnglish
Article number5481981
Pages (from-to)402-404
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume20
Issue number7
DOIs
StatePublished - 1 Jul 2010

Keywords

  • Complementary
  • input matching
  • low noise amplifier (LNA)
  • source degeneration
  • wideband

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