Complementary substrate-triggered SCR devices for on-chip ESD protection circuits

Ming-Dou Ker, Kuo Chun Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

The turn-on mechanism of SCR device is essentially a current triggering event. While a current is applied to the base or substrate of a SCR device, it can be quickly triggered on into its latching state. In this paper, the complementary substrate-triggered SCR devices, which are combined with the substrate-triggered technique and SCR devices, are first reported in the literature for using in the on-chip ESD protection circuits. A complementary style on the substrate-triggered SCR devices is designed to discharge both of the positive and negative ESD stresses on the pad. The total holding voltage of the substrate-triggered SCR device can be increased by adding the stacked diode string to avoid the transient-induced latchup issue in the ESD protection circuits. The on-chip ESD protection circuits designed with the proposed complementary substrate-triggered SCR devices for the I/O pad and power pad have been successfully verified in a 0.25-μm STI CMOS process with the HBM (MM) ESD level of >8kV (650V) in a small layout area.

Original languageEnglish
Title of host publicationProceedings - 15th Annual IEEE International ASIC/SOC Conference, ASIC/SOC 2002
EditorsJohn Chickanosky, Ram K. Krishnamurthy, P.R. Mukund
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages229-233
Number of pages5
ISBN (Electronic)0780374940
DOIs
StatePublished - 1 Jan 2002
Event15th Annual IEEE International ASIC/SOC Conference, ASIC/SOC 2002 - Rochester, United States
Duration: 25 Sep 200228 Sep 2002

Publication series

NameProceedings of the Annual IEEE International ASIC Conference and Exhibit
Volume2002-January
ISSN (Print)1063-0988

Conference

Conference15th Annual IEEE International ASIC/SOC Conference, ASIC/SOC 2002
CountryUnited States
CityRochester
Period25/09/0228/09/02

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