Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime

J. Kedzierski*, P. Xuan, E. H. Anderson, J. Bokor, T. J. King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

252 Scopus citations

Abstract

Thin-body transistors with silicide source/drains were fabricated with gate-lengths down to 15nm. Complementary low-barrier silicides were used to reduce contact and series resistance. Minimum gate-length transistors with Tox=40Å show PMOS |Idsat|=270μA/μm and NMOS |Idsat|=190μA/μm with Vds=1.5V, |Vg-Vt|=1.2V and, Ion/Ioff>104. A simple transmission model, fitted to experimental data, is used to investigate effects of oxide scaling and extension doping.

Original languageEnglish
Pages (from-to)57-59
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 10 Dec 200013 Dec 2000

Fingerprint Dive into the research topics of 'Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime'. Together they form a unique fingerprint.

Cite this