There are one LVTSCR device merged with short-channel NMOS and another LVTSCR device merged with short-channel PMOS in complementary style to offer effective and direct ESD discharging paths from the input or output pads to Vss and Vdd power lines. The dc switching voltage of LVTSCR devices is lowered to the snapback voltage of short-channel NMOS and PMOS devices. Experimental results show that it can perform excellent ESD protection capability in a smaller layout area.
|Number of pages||4|
|Journal||Proceedings - IEEE International Symposium on Circuits and Systems|
|State||Published - 1 Jan 1995|
|Event||Proceedings of the 1995 IEEE International Symposium on Circuits and Systems-ISCAS 95. Part 3 (of 3) - Seattle, WA, USA|
Duration: 30 Apr 1995 → 3 May 1995