Complementary carbon nanotube-gated carbon nanotube thin-film transistor

Bae Horng Chen, Horng-Chih Lin, Tiao Yuan Huang, Jeng Hua Wei, Hung Hsiang Wang, Ming Jinn Tsai, Tien-Sheng Chao*

*Corresponding author for this work

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

We introduce, a complementary carbon nanotube (CNT)-gated CNT thin-film field effect transistor (FET). By using two perpendicularly crossed single-wall CNT (SWNT) bundles as the gate and the channel interchangeably, a sub- 50 nm complementary CNT-FET is demonstrated. It is found that the new CNT-FET shows acceptable FET characteristics by interchanging the roles of the gate and the channel. The unique dual functionality of the device will open up a new possibility and flexibility in the design of future complementary CNT electronic circuits.

Original languageEnglish
Article number093502
JournalApplied Physics Letters
Volume88
Issue number9
DOIs
StatePublished - 27 Feb 2006

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